Toshiba MG100J6ES50 New Stock
#MG100J6ES50 Toshiba MG100J6ES50 New MG100J6ES50 IGBT: 100A600V; TOSHIBA GTR Module Silicon N Channel IGBT. MG100J6ES50. High Power Switching Applications. Motor Control; MG100J6ES50 , MG100J6ES50 pictures, MG100J6ES50 price, #MG100J6ES50 supplier
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Email: sales@shunlongwei.com
High Power Switching Applications
Motor Control Applications
The electrodes are isolated from case.
High input impedance.
6 IGBTs built into 1 package.
Enhancement-mode.
High speed : tf = 0.30µs (Max) (IC = 100A)
trr = 0.15µs (Max) (IF = 100A)
Low saturation voltage
: VCE (sat) = 2.70V (Max) (IC = 100A)
IGBT: 100A600V; Toshiba GTR Module Silicon N Channel IGBT. MG100J6ES50. High Power Switching Applications. Motor Control
Motor Control Applications
The electrodes are isolated from case.
High input impedance.
6 IGBTs built into 1 package.
Enhancement-mode.
High speed : tf = 0.30µs (Max) (IC = 100A)
trr = 0.15µs (Max) (IF = 100A)
Low saturation voltage
: VCE (sat) = 2.70V (Max) (IC = 100A)
IGBT: 100A600V; Toshiba GTR Module Silicon N Channel IGBT. MG100J6ES50. High Power Switching Applications. Motor Control