10 billion yuan, Roshow Technology signed a contract for the third-generation power semiconductor (silicon carbide) industrial park project in Hefei

On September 15, Roshow Technology Co., Ltd. (hereinafter referred to as “Roshow Technology”) announced that the company and Anhui Changfeng Shuangfeng Economic Development Zone Management Committee (hereinafter referred to as “Shuangfeng Economic Development Zone”) were in Hefei Municipal Government. Signed the “Changfeng County Investment Promotion Project Investment Cooperation Agreement”, the company will jointly invest in the construction of the third-generation power semiconductor (silicon carbide) industrial park in Changfeng County, Hefei with the People’s Government of Changfeng County, Hefei.

According to the announcement, the total investment of the industrial park project is 10 billion yuan, of which the first phase investment is 2.1 billion yuan, and the first phase investment in fixed assets is 1.6 billion yuan (the first phase investment is 360 million yuan, of which 300 million yuan is invested in fixed assets). Leading R&D and production base for the third-generation power semiconductor (silicon carbide) equipment manufacturing, crystal growth, substrate processing, epitaxy and other industrial chains. After the first phase of the project is completed and put into production, it can form an annual production capacity of 240,000 conductive silicon carbide substrate wafers and 50,000 epitaxial wafers.

In order to ensure the smooth progress of the project, Roshow promises to register and establish an independent accounting legal person company (hereinafter referred to as the “new company”) with relevant investors in the Shuangfeng Economic Development Zone. Account opening, tax payment, statistics, etc., the registered capital of the new company shall not be less than 360 million yuan.

On the evening of September 8, the Shenzhen Stock Exchange issued a letter of concern to Roshow Technology, whose stock price has risen sharply, asking Roshow Technology to explain the background of the agreement signed with Changfeng County, Hefei, the business cooperation model or proposed model, and the specific details of local government participation in investment. method, rights and obligations of both parties, relevant property rights, control relationship, etc., as well as the basic situation of the third-generation power semiconductor (silicon carbide) industry project to be invested and constructed, and the specific considerations for vigorously investing in the field of silicon carbide.

In this regard, Roshow Technology stated in its reply letter on September 9 that the domestic silicon carbide industry is just in its infancy, and the investment in comparable projects is relatively small. ) Industrial Park is to accelerate the company’s silicon carbide industry layout and grab the commanding heights of the silicon carbide market. Roshow has the conditions to enter the field of silicon carbide materials in terms of capital, market and technology, and it is feasible to implement the construction of the third-generation semiconductor (silicon carbide) industrial park.

Roshow Technology pointed out that the implementation of this project in Hefei will bring the agglomeration effect of third-generation compound semiconductors, better drive local employment, increase local tax revenue, and contribute to local economic and social development. The signing of the strategic cooperation agreement between the two parties will help accelerate the strategic layout of Roshow’s silicon carbide industry and enhance the company’s core competitiveness.

Roshow Technology Overweight Silicon Carbide Industry

According to the data, Roshow Technology is a large-scale enterprise specializing in the production and sales of copper core and aluminum core magnet wire. Listed on the Shenzhen Stock Exchange in September 2011. In recent years, Roshow has begun to increase the layout of the silicon carbide industry. Based on the sapphire technology reserve, the company has broken through the silicon carbide process barrier and deployed silicon carbide crystal growth furnaces and wafer production on the basis of sapphire. It has become a leading sapphire crystal growth furnace in China. The manufacturer is one of the largest companies in the field of sapphire equipment, crystal growth and substrate processing in China.

At present, Roshow Technology has successfully developed silicon carbide self-controllable crystal growth equipment, and began to supply it in 2019. In addition to the third-generation semiconductor industry project that has landed this time, Roshow has also made many moves before.

On April 12, 2020, Roshow Technology released a non-public offering plan, stating that the total amount of funds to be raised will not exceed 1 billion yuan, which will be used for “new silicon carbide substrate wafer industrialization projects”, “silicon carbide R&D Center Project” and “Repayment of Bank Loans” project.

Among them, the new silicon carbide substrate wafer industrialization project was officially started on July 30. It is reported that the total investment of Roshow Technology’s new silicon carbide substrate industrialization project is 695 million yuan, and it is planned to use the raised funds to invest 650 million yuan. The project construction period is 24 months, and it is planned to produce silicon carbide substrates and other products. The project products have Larger size, wider band gap, higher breakdown electric field, higher thermal conductivity, greater electron saturation, and higher radiation resistance.

Earlier (the end of 2019), Roshow Technology signed a strategic cooperation agreement with Sinosteel and Guohong Zhongyu. The three parties agreed to work together to develop 4-inch, 6-inch and , 8-inch or larger silicon carbide crystal growth equipment; jointly build a silicon carbide substrate wafer processing center. In addition, the announcement also pointed out that Roshow Technology and (or) its holding companies will customize about 200 silicon carbide crystal growth furnaces for the silicon carbide industrialization project led by Guohong Zhongyu before 2020, with a total purchase amount of about 3 billion.

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